Optimization of PSG Flowing and Metallization for Step Coverage Improvement

스텝 커버리지를 위한 PSG와 기첩처리 공정 조건의 개선

One significant problem which arises during the fabrication of LSI and/or VLSI is how to make a good step coverage for aluminum. One way developed in this study is to flow PSG containing 8.0 wt.% - 8.6 wt.% of phosphorus at 95$0^{\circ}C$ for 30 minutes in steam and to depo3it aluminum of 1 urn thickness at $250^{\circ}C$.

LSI나 VLSI 소자의 제조 공정중 금속막이 기존의 스텝 커버리지를 좋게 하는 것은 매우 중요한 일이다. 본 인구에서 얻어진 방법은 8.0∼8.6wt.%의 인을 고함하는 PCG를 증기 (steam) 분위기의 950℃에서 30분간 열처리한 후 250℃에서 1 um의 악루미늄을 증착하는 것이다. One significant problem which arises during the fabrication of LSI and/or VLSI is how to make a good step coverage for aluminum. One way developed in this study is to flow PSG containing 8.0 wt.% - 8.6 wt.% of phosphorus at 950℃ for 30 minutes in steam and to depo3it aluminum of 1 urn thickness at 250℃.