감이온 전양효과 트랜지스트

Ion Sensitive Field Effect Transistor

게이트절연층을 위한 HCI 열처리법 텅그스텐 metallization 및 fumed silica epoxy를 쓴 다중층 encapsulation 기술을 감이온 전장효과 트랜지스터(ISFET) 제조에 활용하고 이의 동작특성을 조사하였다. 또 ISFET를 위한 이론적 모형을 제시하고 이 것이 실험사실과 잘 일치함을 보였다. 제조된 ISFET는 빠른 반응, 긴 수명 및 작은 이압특성을 나타내었는데, 특히 안정부는 크게 개선되었다.

An ion sensitive field effect transistor employing a special HCI heat treatment for the gate oxide layer along with tungsten metallization and multilayer encapsulation using fumed silica epoxy mixture was fabricated and its performance characteristics have been investigated. A theoretical model for the device operation is discussed, and it is shown that the experimental results are in good agreement with the theory. The fabricated device has excellent performance characteristics showing the fast response, long operation-life, small pH hysteresis, high sensitivity, etc. Especially, its stability has been greatly improved.