Photovoltaic Effects of $SnO_2$-$Sb_xS_{1-x}$-Sn Structure

$SnO_2$-$Sb_xS_{1-x}$-Sn 구조에서의 광기전력 효과

  • 박태영 (동신실업전문대학 건축과) ;
  • 김화택 (전남대학교 물리학과)
  • Published : 1979.09.01

Abstract

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.

SnO2- amorphous Sb 5 thin film-Sn structure에서 SnO2 창으로 photon을 입사시켰을 때 photo-voltaic 효과를 발견했으며 photon의 energy에 따라 photowltage의 부호가 반전 되었다. 이러한 현상은 SnO2- Sb S 사이에서 n-n heterojunction이, Sb S Sn사이에서 schottky junction이 형성되기 때문인 것으로 여겨진다.

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