Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 16 Issue 4
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- Pages.32-35
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- 1979
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- 1016-135X(pISSN)
Photovoltaic Effects of $SnO_2$ -$Sb_xS_{1-x}$ -Sn Structure
$SnO_2$ -$Sb_xS_{1-x}$ -Sn 구조에서의 광기전력 효과
Abstract
When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.
SnO2- amorphous Sb 5 thin film-Sn structure에서 SnO2 창으로 photon을 입사시켰을 때 photo-voltaic 효과를 발견했으며 photon의 energy에 따라 photowltage의 부호가 반전 되었다. 이러한 현상은 SnO2- Sb S 사이에서 n-n heterojunction이, Sb S Sn사이에서 schottky junction이 형성되기 때문인 것으로 여겨진다.
Keywords