Photovoltaic Effect of the Si-AnSe n-n Heterojunction

Si-ZnSe n-n Heterojunction의 광기전력 효과

Si-ZnSe n-n heterojunction was made by growing ZnSe thin film on the Si single crystal (111) surface with Bash evaporating method in vacuum. This heterojunction was found to be a useful device for frequency meter in the visible wave-length from the measuring of the photovoltaic effect of the heterojunction.

Flash증착법으로 Si단결정 (111)면위 에 ZnSe박막을 성장시켜 Si-ZnSe n-n heterojunction을 만들었다. 이 heterojunction의 광기전력 특성을 규명하여 가시광 영역에 감도를 갖는 frequency meter로 사용할 수 있음을 제시했다.