전기의세계
- 제26권5호
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- Pages.83-89
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- 1977
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- 1598-4613(pISSN)
Epitaxial에 의한 Si epi층의 케리어 수명과 P-N접합의 이상전도현상
Carrier Lfetime and Anormal Cnduction Penomena in Silicon Epitaxial Layer-substrate Junction
초록
This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V
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