Effects of Sb doping on the Characteristis of $SnO_2$ Transparent Electrodes

$SnO_2$ 수용전극특성에 미치는 Sb첨가의 영향

Transparent eloctroaes of polycrystalline till-oxide films doped with antimony are prepared on the substrate of microscopic cover g1ass by modified spray method and from SnCl4 Solution. Their electrical and optical properties are investigated in relation to the surface temperature of the substrate glass and to antimony concentration in the starting materials. The sheet.resiststrace of the film electrodes and transmittance for incandescent light depen on tile antimony concentration and surface temperature of substrates at the time of making films. The transmittance increases with decrease of sheet resistance of the film. The optimum sheet.resistance was obtianed in the case of the antimony concentration 0.6(%) approximately , and the max. transmittance was 93(%).

염화제이석을 출발물질로 하여 예열을 병용한 광무부착방식으로 유리 박판 위에 SnOf수명전극을 형성시켜 그의 Sheet 무항과 광투과률에 미치는 Sb연가량와 영향을 실행적으로 검토하였다. Sheet 저항을 전극작성시의 기판유리의 표면 온도가 높을수록 낮아지며 백색광에 대한 투과률을 Sheet 저항저하와 더불어 증가되는데 최대 약 93{%)였다. 기판표면온도는 700(℃) 부근이 적당하며 같은 표이온도의 경우 출발물질에서의 Sb/Sn의 비율이 약 0.6(%)일 경우 최저의 저항치를 얻을 수 있었다. Transparent eloctroaes of polycrystalline till-oxide films doped with antimony are prepared on the substrate of microscopic cover g1ass by modified spray method and from SnCl4 Solution. Their electrical and optical properties are investigated in relation to the surface temperature of the substrate glass and to antimony concentration in the starting materials. The sheet·resiststrace of the film electrodes and transmittance for incandescent light depen on tile antimony concentration and surface temperature of substrates at the time of making films. The transmittance increases with decrease of sheet resistance of the film. The optimum sheet·resistance was obtianed in the case of the antimony concentration 0.6(%) approximately , and the max. transmittance was 93(%).