Silicon P-N Junction Diode에 대한 X-Ray 및 Gamma-Ray 의 Dose Ratec 측정

Measurements of X-Ray and Gamma Ray Dosse Rate by the Silicon P-N Junction Diode

The measurements of X-ray and Gamma-ray Dose Rate have been successfully made by measuring the short circuit current of the Silicon P-N Junction Diode being irradiated. The short circuit current flows when a silicon P-N Junction Diode is irradiated by X-ray of Gammaray radiations due to photovoltaic effect. A brief analysis is given in order to verify the proportionality of a short circuit current to the Dose Rate. Using this method, measurements of X-ray Dose Rate were carried out in the range of 0.05-1600 r/m successfully. The calibration was made by comparing with Victoreen condenser r-meter. Some advantages in this Dose Rate meter over a condenser r-meter were found. One can measure a continous variation of X-ray Dose Rate with this rate meter at the control console of X-ray device.