Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
권호 표지

Investigation of Tunneling Thickness of Fe-MgF2 Glanular Film for Single Electron Transistor Operation

단전자트랜지스터 동작을 위한 Fe-MgF2그래뉼라 필름의 두께에 대한 조사

  • Byun, Beommo (Department of Electrical, Electronic and Control Engineering, Hankyong National University) ;
  • Takayuki, Gakashi (Graduate School of Information Science and Technology, Hokkaido University) ;
  • Fukuchi, Atsushi (Graduate School of Information Science and Technology, Hokkaido University) ;
  • Masashi, Arita (Graduate School of Information Science and Technology, Hokkaido University) ;
  • Yasuo, Takahashi (Graduate School of Information Science and Technology, Hokkaido University) ;
  • Yu, Yun Seop (Department of Electrical, Electronic and Control Engineering, Hankyong National University)
  • 변범모 (한경대학교 전기전자제어공학과) ;
  • 瘧師貴幸 (북해도대학 나노물성연구실) ;
  • 有田正志 (북해도대학 나노물성연구실) ;
  • 有田正志 (북해도대학 나노물성연구실) ;
  • 高橋庸夫 (북해도대학 나노물성연구실) ;
  • 유윤섭 (한경대학교 전기전자제어공학과)
  • Published : 2019.05.23
Download PDF
⟨ Previous Next ⟩

Abstract

We have investigated the experiments in which fabrication and characterization of single-electron transistors were conducted due to easy fabrication and high functionality. In the Fe-MgF2 granular film, in which Fe grains are distributed between insulators instead of the conventional quantum dots, it can be easily fabricated by EB deposition alone, and various output values can be expected by applying two or more gate voltages. The tunneling thickness of the film for single-electron operation was investigated and it was confirmed that the tunneling occurred at 2.1 nm.

본 연구에서는 단전자트랜지스터 제작의 용이성과, 고기능화를 위한 실험을 진행하였다. 기존의 양자점 대신에 절연체 사이에 철 알갱이가 분포되어 있는 Fe-MgF2그래뉼라막으로 제작하면 전자빔증착만으로 쉽게 제작할 수 있고 둘 이상의 게이트 전압을 인가하여 다양한 출력 값을 기대할 수 있다. 단전 자트랜지스터가 동작하기 위한 막의 두께를 조사하였고 2.1 nm에서 터널링이 일어남을 확인하였다.

Keywords