한국표면공학회:학술대회논문집 (Proceedings of the Korean Institute of Surface Engineering Conference)
- 한국표면공학회 2018년도 춘계학술대회 논문집
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- Pages.142.1-142.1
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- 2018
Indium Gallium Zinc Oxide(IGZO) Thin-film transistor operation based on polarization effect of liquid crystals from a remote gate
초록
This research presents a new field effect transistor (FET) by using liquid crystal gate dielectric with remote gate. The fabrication of thin-film transistors (TFTs) was used Indium tin oxide (ITO) for the source, drain, and gate electrodes, and indium gallium zinc oxide (IGZO) for the active semiconductor layer. 5CB liquid crystal was used for the gate dielectric material, and the remote gate and active layer were covered with the liquid crystal. The output and transfer characteristics of the LC-gated TFTs were investigated.
키워드