초록
${\cdot}$ GaN E-HEMT provides superior performance vs. Si MOSFET or IGBT, and also superior performance vs. SiC, below ~1200V ${\cdot}$ GaN E-HEMT is replacing Si MOSFET and IGBT in major application segments, and Industry Adoption will accelerate ${\cdot}$ Technology advances in GaN E-HEMT have made high-current true Normally-Off devices available in current ranges from 7A to 250A ${\cdot}$ While GaN has improved Properties vs. SiC or Si, different types of GaN devices offer different levels of performance or robustness ${\cdot}$ JEDEC Industrial-Grade Qualification of GaN E-HEMTs has been achieved, and Automotive Qualification is in progress.