과제정보
연구 과제 주관 기관 : National Research Foundation of Korea(NRF)
This study investigated the effect of strain on hole mobility and hole effective mass in a p-channel rectangular nanowire with two-dimensional confinement. We obtained the valence energy band structure using the six-band k.p method and calculated the mobility and effective mass of the hole in the [100] direction taking the strain effect into account in the inversion region. The hole mobility of strained silicon was calculated using Kubo-Greenwood formalism. As a result, it showed good performance compared to relaxed silicon, but its magnitude was insignificant.
연구 과제 주관 기관 : National Research Foundation of Korea(NRF)