Proceeding of EDISON Challenge (EDISON SW 활용 경진대회 논문집)
- 2016.03a
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- Pages.368-372
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- 2016
Semi-analytical Modeling of Transition Metal Dichalcogenide (TMD)-based Tunneling Field-effect Transistors (TFETs)
Abstract
In this paper, the physics-based analytical model of transition metal dichalcogenide (TMD)-based double-gate (DG) tunneling field-effect transistors (TFETs) is proposed. The proposed model is derived by using the two-dimensional (2-D) Landauer formula and the Wentzel-Kramers-Brillouin (WKB) approximation. For improving the accuracy, nonlinear and continuous lateral energy band profile is applied to the model. 2-D density of states (DOS) and two-band effective Hamiltonian for TMD materials are also used in order to consider the 2-D nature of TMD-based TFETs. The model is validated by using the tight-binding non-equilibrium Green's function (NEGF)-based quantum transport simulation in the case of monolayer molybdenum disulfide (
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