Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
- /
- Pages.426.1-426.1
- /
- 2016
High Work Function of AZO Fhin Films as Insertion Layer between TCO and p-layer and Its Application of Solar Cells
- Kang, Junyoung (School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University) ;
-
Park, Hyeongsik
(School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University) ;
-
Yi, Junsin
(School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University)
- Published : 2016.02.17
Abstract
We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.
Keywords
- Oblique angle deposition;
- magnetron sputtering;
- AZO film;
- surface texture;
- amorphous silicon solar cell