Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.324-326
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- 2016
Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer
- Park, Heejun (College of Information and Communication Engineering, Sungkyunkwan University) ;
- Nguyen, Cam Phu Thi (College of Information and Communication Engineering, Sungkyunkwan University) ;
- Raja, Jayapal (College of Information and Communication Engineering, Sungkyunkwan University) ;
- Jang, Kyungsoo (College of Information and Communication Engineering, Sungkyunkwan University) ;
- Jung, Junhee (Department of Energy Science, Sungkyunkwan University) ;
- Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
- Published : 2016.02.17
Abstract
In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of