한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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- Pages.306.1-306.1
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- 2016
Electrical properties of n-ZnO/p-Si heterojunction photovoltaic devices
- Kang, Ji Hoon (Department of Physics, Hanyang University) ;
- Lee, Kyoung Su (Department of Physics, Hanyang University) ;
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Kim, Eun Kyu
(Department of Physics, Hanyang University)
- 발행 : 2016.02.17
초록
ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately