Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.291.1-291.1
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- 2016
Improvement Performance of Graphene-MoS2 Barristor treated by 3-aminopropyltriethoxysilane (APTES)
- O, Ae-Ri (School of Electronics and Electrical Engineering, Sungkyunkwan university) ;
- Sim, Jae-U (School of Electronics and Electrical Engineering, Sungkyunkwan university) ;
- Park, Jin-Hong (School of Electronics and Electrical Engineering, Sungkyunkwan university)
- Published : 2016.02.17
Abstract
Graphene by one of the two-dimensional (2D) materials has been focused on electronic applications due to its ultrahigh carrier mobility, outstanding thermal conductivity and superior optical properties. Although graphene has many remarkable properties, graphene devices have low on/off current ratio due to its zero bandgap. Despite considerable efforts to open its bandgap, it's hard to obtain appropriate improvements. To solve this problem, heterojunction barristor was proposed based on graphene. Mostly, this heterojunction barristor is made by transition metal dichalcogenides (TMDs), such as molybdenum disulfide (