Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.289.1-289.1
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- 2016
Research on the copper diffusion process in germanium metal induced crystallization by different thickness and various temperature
- Kim, Jinok (School of Electronics and Electrical Engineering, Sungkyunkwan University) ;
- Park, Jin-Hong (School of Electronics and Electrical Engineering, Sungkyunkwan University)
- Published : 2016.02.17
Abstract
Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and