Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.198.1-198.1
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- 2016
Low Temperature PECVD for SiOx Thin Film Encapsulation
- Ahn, Hyung June (SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU)) ;
- Yong, Sang Heon (School of Chemical Engineering, Sungkyunkwan University (SKKU)) ;
- Kim, Sun Jung (School of Chemical Engineering, Sungkyunkwan University (SKKU)) ;
- Lee, Changmin (School of Chemical Engineering, Sungkyunkwan University (SKKU)) ;
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Chae, Heeyeop
(SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU))
- Published : 2016.02.17
Abstract
Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated.
Keywords
- Plasma Enhanced Chemical Vapor Deposition (PECVD);
- Low Temperature Thin Film Encapsulation (TFE);
- Silicon Oxide (SiOx)