Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2015.08a
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- Pages.192.1-192.1
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- 2015
Non volatile memory device using mobile proton in gate insulator by hydrogen neutral beam treatment
- Published : 2015.08.24
Abstract
We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under