한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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- Pages.187-187
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- 2015
Transparent ITO/Ag/i-ZnO Multilayer Thin Film enhances Lowing Sheet Resistance
- Kim, Sungyoung (Department of Electronics Engineering, Gachon University) ;
- Kim, Sangbo (Department of Electronics Engineering, Gachon University) ;
- Heo, Jaeseok (Department of Electronics Engineering, Gachon University) ;
- Cho, Eou-Sik (Department of Electronics Engineering, Gachon University) ;
- Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)
- 발행 : 2015.08.24
초록
The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately