Degradation Pattern of Black phosphorus Field Effect Transistor

We investigate the degradation pattern of Black phosphorus (BP) field effect transistor (FETs) was investigated by using an mechanically exfoliated BP that react O2 and water vapor in ambient condition, degradation. The BP FETs was electrically measured every 20 minutes (1cycle) in the air, the total cycle is 100. We show electrical changes with Mobility, On/off ratio, Current and a significant positive shift in the threshold voltage. We extracted the current level at Vgs-Vth = 0, -10, -20 and fitting with Swiss-cheese model. This model suggested that Swiss-cheese model is well fitted with degradation pattern of BP FETs.