한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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- Pages.136.1-136.1
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- 2015
Synthesis of SiNx:H films in PECVD using RF/UHF hybrid sources
- Shin, K.S. (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology(CAPST), Department of advanced materials science and engineering, Sungkyunkwan University) ;
- Sahu, B.B. (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology(CAPST), Department of advanced materials science and engineering, Sungkyunkwan University) ;
- Lee, J.S. (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology(CAPST), Department of advanced materials science and engineering, Sungkyunkwan University) ;
- Hori, M. (Plama Nanotechnology Research Center, Nagoya University) ;
- Han, Jeon G. (NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology(CAPST), Department of advanced materials science and engineering, Sungkyunkwan University)
- 발행 : 2015.08.24
초록
In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.