Humidity dependent size control of local anodic oxidation on graphene using Atomic Force Microscope

원자힘 현미경의 습도 조절에 의한 그래핀 국소 산화

We demonstrate nanoscale local anodic oxidation (LAO) patterning on few layer graphene using atomic force microscope (AFM) at room temperature and normal atmosphere. We focus on the humidity dependency in nanoscale oxidation of graphene. The relationship between the oxidation size and the AFM setting values, such as set point, tip speed, and humidity are observed. By changing these values, proper parameters were found to produce features on demand size. This technique provides an easy way to form graphene oxide lithography without any chemical resists. We have obtained oxidation size down to 50-nm with 6-nm-height oxide barrier line with $0.1{\mu}m/s$ tip scanning speed and micrometer size symbols on a graphene flake. We attribute the bumps to local anodic oxidation on graphene surface and combination of oxygen ions into the graphene lattice.