High-temperature Oxidation of ZrO2/Al2O3 Thin Films

ZrO2/Al2O3 박막의 고온산화

  • Park, Soon Young (School od Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Yadav, Poonam (School od Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Abro, Muhammad Ali (School od Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Lee, Dong Bok (School od Advanced Materials Science & Engineering, Sungkyunkwan University)
  • Published : 2014.11.20

Abstract

Thin $ZrO_2/Al_2O_3$ films were deposited on a tool steel substrate using Zr and Al cathodes in a cathodic arc plasma deposition system (CAPD), and then oxidized at $600-900^{\circ}C$ in air for up to 50 h. They effectively suppressed the oxidation of the substrate up to $800^{\circ}C$ by acting as a barrier layer against the outward diffusion of the substrate elements and inward diffusion of oxygen. However, rapid oxidation occurred at $900^{\circ}C$ due mainly to the increased diffusion and subsequent oxidation of steel as well as the crystallization of amorphous $Al_2O__3$.

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