Proceedings of the KIPE Conference (전력전자학회:학술대회논문집)

The Korean Institute of Power Electronics (전력전자학회)
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Characteristics of High Power Semiconductor Device Losses in 5MW class PMSG MV Wind Turbines

  • Kwon, Gookmin (Department of Electrical Engineering, Smart Grid Research Center, Chonbuk National University) ;
  • Lee, Kihyun (Department of Electrical Engineering, Smart Grid Research Center, Chonbuk National University) ;
  • Suh, Yongsug (Department of Electrical Engineering, Smart Grid Research Center, Chonbuk National University)
  • Published : 2014.07.01
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Abstract

This paper investigates characteristics of high power semiconductor device losses in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor device of press-pack type IGCT of 6.5kV is considered in this paper. Analysis is performed based on neutral point clamped (NPC) 3-level back-to-back type voltage source converter (VSC) supplied from grid voltage of 4160V. This paper describes total loss distribution at worst case under inverter and rectifier operating mode for the power semiconductor switches. The loss analysis is confirmed through PLECS simulations. In addition, the loss factors due to di/dt snubber and ac input filter are presented. The investigation result shows that IGCT type semiconductor devices generate the total efficiency of 97.74% under the rated condition.

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