The Channel Material Study of Double Gate Ultra-thin Body MOSFET for On-current Improvement

  • 박재혁 (한국과학기술원(KAIST), 전기 및 전자공학과) ;
  • 정효은 (한국과학기술원(KAIST), 전기 및 전자공학과)
  • Published : 2014.03.21

Abstract

In this paper, quantum mechanical simulations of the double-gate ultra-thin body (DG-UTB) MOSFETs are performed according to the International Technology Roadmap of Semiconductors (ITRS) specifications planned for 2020, to devise the way for on-current ($I_{on}$) improvement. We have employed non-equilibrium Green's function (NEGF) approach and solved the self-consistent equations based on the parabolic effective mass theory [1]. Our study shows that the [100]/<001> Ge and GaSb channel devices have higher $I_{on}$ than Si channel devices under the body thickness ($T_{bd}$) <5nm condition.

Keywords