Application of Novel BSF Metal and Laser Annealing to Silicon Heterojunction Solar Cell

  • 봉성재 (성균관대학교 정보통신대학 전자전기컴퓨터 공학부) ;
  • 김선보 (성균관대학교 에너지에너지과학과) ;
  • 안시현 (성균관대학교 정보통신대학 전자전기컴퓨터 공학부) ;
  • 박형식 (성균관대학교 정보통신대학 전자전기컴퓨터 공학부) ;
  • 이준신 (성균관대학교 정보통신대학 전자전기컴퓨터 공학부)
  • Published : 2014.02.10

Abstract

Generally, silicon heterojunction solar cell has intrinsic and n-type of hydrogenated amorphous silicon (a-Si:H) as passivation layer and BSF layer. In this study, antimony, novel material, deposited on back side of the heterojunction solar cell as passivation and BSF layer to substitute the a-Si:H and the characteristics of the solar cell such electrical properties and optical properties were analyzed. And SIMS analysis was carried out to obtain the depth profile of the BSF layer which was deposited by laser annealing process.

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