Electrical, Optical and Structural Properties of ZrO2 and In2O3 Co-sputtered Electrdoes for Organic Photovoltaics (OPVs)

  • Cho, Da-Young (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) ;
  • Shin, Yong-Hee (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) ;
  • Chung, Kwun-Bum (Department of Physics, Dankook University) ;
  • Na, Seok-In (Graduate School of Flexible and Printable Electronics and Polymer Materials Fusion Research Center, Chonbuk National University) ;
  • Kim, Han-Ki (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University)
  • 발행 : 2014.02.10

초록

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

키워드