Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.322.2-322.2
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- 2014
Study of n-ZnO/InGaN/p-GaN Lihgt Emitting Diodes
- Gang, Chang-Mo ;
- Nam, Seung-Yong ;
- Gong, Deuk-Jo ;
- Choe, Sang-Bae ;
- Seong, Won-Seok ;
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Lee, Dong-Seon
- 강창모 (광주과학기술원 정보통신공학부) ;
- 남승용 (광주과학기술원 정보통신공학부) ;
- 공득조 (광주과학기술원 정보통신공학부) ;
- 최상배 (광주과학기술원 정보통신공학부) ;
- 성원석 (광주과학기술원 정보통신공학부) ;
-
이동선
(광주과학기술원 정보통신공학부)
- Published : 2014.02.10
Abstract
Lighting emitting diodes of n-ZnO/MQW/p-GaN structure are fabricated and investigated. To realize this LED structure, n-ZnO/MQW/p-GaN are grown by MOCVD. At several bias voltages, blue-green light is emitted from the ZnO mesa edge. However, the emission is restricted near the mesa edge. It is seen that the hole current does not spread well. It is because conductivity of p-GaN is extremely small. The break down voltage of the device is small compared to conventional InGaN/GaN LEDs. It is seen that ZnO columnar grain boundaries act as leakage current paths and non-radiative recombination center.