Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.314.1-314.1
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- 2014
Ohmic Contact Properties of Nonpolar GaN Grown on r-plane Sapphire Substrate with Different Miscut Angle
- Shin, Dongsu (Department of Electronics and Computer Engineering, Hanyang University) ;
- Park, Jinsub (Department of Electronics and Computer Engineering, Hanyang University)
- Published : 2014.02.10
Abstract
The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate (