Photo-sensing Characteristics of VO2 Nanowires

  • Sohn, Ahrum (Department of Physics, Ewha Womans University) ;
  • Kim, Eunah (Department of Physics, Ewha Womans University) ;
  • Kim, Haeri (Department of Physics, Ewha Womans University) ;
  • Kim, Dong-Wook (Department of Physics, Ewha Womans University)
  • Published : 2014.02.10

Abstract

VO2 has intensively investigated for several decades due to its interesting physical properties, including metal-insulator transition (MIT), thermochromic and thermoelectric properties, near the room temperature. And also gas and photo sensing properties of VO2 nanowires have attracted increasing research interest due to the high sensitivity and multi-sensing capability. We studied the light-induced resistance change of VO2 nanowires. In particular, we have investigated plasmonic enhancement of the photo-sensing properties of the VO2 nanowires. To select proper wavelength, we performed finite-difference time-domain simulations of electric field distribution in the VO2 nanowires attached with Ag nanoparticles. Localized surface plasmon resonance (LSPR) is expected at wavelength of 560 nm. The photo-sensitivity was carefully examined as a function of the sample temperature. In the presentation, we will discuss physical origins of the photo-induced resistance change in VO2.

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