한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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- Pages.398-398
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- 2013
The Effect of the Oxygen Flow Rate on the Electronic Properties and the Local Structure of Amorphous Tantalum Oxide Thin Films
- Denny, Yus Rama (Department of Physics, Chungbuk National University) ;
- Lee, Sunyoung (Department of Physics, Chungbuk National University) ;
- Lee, Kangil (Department of Physics, Chungbuk National University) ;
- Kang, Hee Jae (Department of Physics, Chungbuk National University) ;
- Yang, Dong-Seok (Department of Physics Education, Chungbuk National University) ;
- Heo, Sung (Analytical Engineering Center, Samsung Advanced Institute of Technology) ;
- Chung, Jae Gwan (Analytical Engineering Center, Samsung Advanced Institute of Technology) ;
- Lee, Jae Cheol (Analytical Engineering Center, Samsung Advanced Institute of Technology)
- 발행 : 2013.02.18
초록
The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet