한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)

한국진공학회 (The Korean Vacuum Society)
권호 표지

Analysis of the Abnormal Voltage-Current Behaviors on Localized Carriers of InGaN/GaN Multiple Quantum well from Electron Blocking Layer

  • Nam, Giwoong (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
  • Kim, Byunggu (Department of Nano Engineering, Inje University) ;
  • Park, Youngbin (Department of Nano Engineering, Inje University) ;
  • Kim, Soaram (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
  • Kim, Jin Soo (Division of Advanced Materials Engineering, Chonbuk National University) ;
  • Son, Jeong-Sik (Department of Visual Optics, Kyungwoon University) ;
  • Leem, Jae-Young (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
  • 발행 : 2013.08.21
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초록

The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

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