Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.08a
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- Pages.207.2-207.2
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- 2013
Fabrication and Characterization of Zinc-Tin-Oxide Thin Film Transistors Prepared through RF-Sputtering
- Do, Woori (Department of Mat. Sci. & Eng., Hongik University) ;
- Choi, Jeong-Wan (Department of Mat. Sci. & Eng., Hongik University) ;
- Ko, Myeong-Hee (Department of Mat. Sci. & Eng., Hongik University) ;
- Kim, Eui-Hyeon (Department of Mat. Sci. & Eng., Hongik University) ;
- Hwang, Jin-Ha (Department of Mat. Sci. & Eng., Hongik University)
- Published : 2013.08.21
Abstract
Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.