한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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- Pages.149.1-149.1
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- 2013
Inhomogeneous Growth of PtSi Studied by Spatially Resolved Photoelectron Spectroscopy
- Kumar, Yogesh (Pohang Accelerator Laboratory) ;
- Lee, Kyoung-Jae (OSTECH) ;
- Yang, Mihyun (Pohang Accelerator Laboratory) ;
- Ihm, Kyuwook (Pohang Accelerator Laboratory) ;
- Hwang, C.C. (Pohang Accelerator Laboratory)
- 발행 : 2013.08.21
초록
Noble metal silicides are widely used in silicon based microelectronic and optoelectronic devices. Among them, as compared to other silicides, structural and electronic properties of platinum silicide (PtSi) are found to be less sensitive to change in its dimensions. PtSi is known to overcome the junction spiking problems of Al-Si contacts. Present study is regarding the spatial evolution of platinum silicide in Pt/SiOx/Si. Scanning photoelectron emission microscopy (SPEM) was used for this purpose. SPEM images were obtained for pristine samples and after an annealing at