한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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- Pages.100-100
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- 2013
Physical Properties of MoS2
초록
Among recently discovered 2-dimensional materials, molybdenum disulfide has fascinating physical properties. It is atomically thin and is a semiconductor with with a similar level of bandgap with silicon. Especially, its properties get interesting when it becomes thinner. Its bandgap goes through bandgap transition from indirect to direct gap. Also its gap size increases as its thickness decreases. In this talk, I am going to present our recent work on characterization of its electrical and optical properties. We used Raman and PL spectroscopy to observe its property dependence on thickness. We fabricated electrical devices to study optimal condition for MoS2 devices. Also we synthesized large-area MoS2 films for devices applications.