Proceeding of EDISON Challenge (EDISON SW 활용 경진대회 논문집)

Korea Institute of Science and Technology Information (한국과학기술정보연구원)
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Simulation of nano MOS gate tunneling current with SiO2/Er2O3 double-layer gate dielectrics

  • Published : 2013.04.17
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Abstract

Nano MOS with $Er_2O_3/SiO_2$ double-layer gate dielectrics was demonstrated by EDISON Nanophysics software. Double-layer structure decreases the gate leakage current in two orders compared with $SiO_2$ single-layer gate dielectric.

Keywords