High-temperature Oxidation of CrZrN Films in Air

CrZrN 박막의 대기 중 고온산화

  • 김민정 (성균관대학교 신소재공학과) ;
  • 황연상 (성균관대학교 신소재공학과) ;
  • 봉성준 (성균관대학교 신소재공학과) ;
  • 이상율 (한국항공대학교 항공재료공학과) ;
  • 이동복 (성균관대학교 신소재공학과)
  • Published : 2012.05.31

Abstract

Films of CrN, $Cr_{40}Zr_9N$, and $Cr_{31}Zr_{16}N$ were deposited on a steel substrate by closed field unbalanced magnetron sputtering, and their oxidation behaviors at $700^{\circ}C$ and $800^{\circ}C$ for up to 60h in air were investigated. All the deposited films were composed of the CrN phase. Zirconium atoms in $Cr_{40}Zr_9N$ and $Cr_{31}Zr_{16}N$ films partially dissolved in the CrN phase. They advantageously refined the columnar structure, reduced the surface roughness, and increased the microhardness. The CrN film displayed relatively good oxidation resistance, owing to the formation of the highly protective $Cr_2O_3$ on its surface. The $Cr_{40}Zr_9N$ and $Cr_{31}Zr_{16}N$ films oxidized to $Cr_2O_3$ as the major phase and ${\alpha}-ZrO_2$ as the minor one. They oxidized primarily by the inward transport of oxygen. The addition of Zr could not increase the oxidation resistance of the CrN film, because the formed $ZrO_2$ that was intermixed in the $Cr_2O_3$-rich oxide layer was oxygen permeable, and developed the compressive stress in the oxide scale owing to the volume expansion during its formation.

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