한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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- Pages.533-534
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- 2012
Synthesis of InP Nanocrystal Quantum Dots Using P(SiMe2tbu)3
- Jeong, So-Myeong (Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials) ;
- Kim, Yeong-Jo (Department of Chemistry, Chungbuk National University) ;
- Jeong, So-Hui (Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials)
- 발행 : 2012.02.08
초록
Colloidal III-V semiconductor nanocrystal quantum dots (NQDs) have attracted attention as they can be applied in various areas such as LED, solar cell, biological imaging, and so on because they have decreased ionic lattices, lager exciton diameter, and reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals is limited by difficulties in control nucleation because the molecular bonds in III-V semiconductors are highly covalent compared to II-VI compounds. There is a need for a method that provides rapid and scalable production of highly quality nanoparticles. We present a new synthetic scheme for the preparation of InP nanocrystal quantum dots using new phosphorus precursor, P(SiMe2tbu)3. InP nanocrystals from 530nm to 600nm have been synthesized via the reaction of In(Ac)3 and new phosphorus precursor in noncoordinating solvent, ODE. This opens the way for the large-scale production of high quality Cd-free nanocrystal quantum dots.