한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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- Pages.427-427
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- 2012
Ferroelectric-gate Field Effect Transistor Based Nonvolatile Memory Devices Using Silicon Nanowire Conducting Channel
- Van, Ngoc Huynh (BK21 Physics Research Division, Department of Energy Science, Institute of Basic Science, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University) ;
- Lee, Jae-Hyun (School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University) ;
- Sohn, Jung-Inn (Frontier Research Lab., Samsung Advanced Institute of Technology, School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Technology, Sungkyunkwan University) ;
- Cha, Seung-Nam (Frontier Research Lab., Samsung Advanced Institute of Technology, School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Technology, Sungkyunkwan University) ;
- Hwang, Dong-Mok (School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University) ;
- Kim, Jong-Min (Frontier Research Lab., Samsung Advanced Institute of Technology, School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Technology, Sungkyunkwan University) ;
- Kang, Dae-Joon (BK21 Physics Research Division, Department of Energy Science, Institute of Basic Science, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University)
- 발행 : 2012.02.08
초록
Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding