Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.408-408
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- 2012
The Influence of $O_2$ Gas on the Etch Characteristics of FePt Thin Films in $CH_4/O_2/Ar$ gas
Abstract
It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of
Keywords
- Inductively Coupled Plasma Reactive Ion Etching;
- FePt Thin Film;
- Magnetic Tunnel Junction;
- $CH_4/O_2/Ar$ gas