Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
- /
- Pages.384-384
- /
- 2012
PRAM Switching Device By Using Current Pulse Modulation
- Lee, Seong-Hyun (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
- Gil, Gyu-Hyun (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
- Lee, Jung-Min (Department of Electronic Computer & Communication Engineering, Hanyang University) ;
- Song, Yun-Heup (Department of Electronic Computer & Communication Engineering, Hanyang University)
- Published : 2012.02.08
Abstract
PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature,