한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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- Pages.341-341
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- 2012
Flexibility Improvement of InGaZnO Thin Film Transistors Using Organic/inorganic Hybrid Gate Dielectrics
- Hwang, B.U. (Department of Advanced Materials Science & Engineering and, Sungkyunkwan University) ;
- Kim, D.I. (Department of Advanced Materials Science & Engineering and, Sungkyunkwan University) ;
- Jeon, H.S. (Department of Advanced Materials Science & Engineering and, Sungkyunkwan University) ;
- Lee, H.J. (Department of Advanced Materials Science & Engineering and, Sungkyunkwan University) ;
- Lee, N.E. (Department of Advanced Materials Science & Engineering and, Sungkyunkwan University)
- 발행 : 2012.02.08
초록
Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and