한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)

한국진공학회 (The Korean Vacuum Society)
권호 표지

Reset-first Resistance Switching Mechanism of HfO2 Films Based on Redox Reaction with Oxygen Drift-Diffusion

  • Kim, Jong-Gi (Department of Materials Science and Engineering, Yonsei University) ;
  • Lee, Sung-Hoon (Department of Materials Science and Engineering, Yonsei University) ;
  • Lee, Kyu-Min (Department of Materials Science and Engineering, Yonsei University) ;
  • Na, Hee-Do (Department of Materials Science and Engineering, Yonsei University) ;
  • Kim, Young-Jae (Department of Materials Science and Engineering, Yonsei University) ;
  • Ko, Dae-Hong (Department of Materials Science and Engineering, Yonsei University) ;
  • Sohn, Hyun-Chul (Department of Materials Science and Engineering, Yonsei University)
  • 발행 : 2012.02.08
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초록

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

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