Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.182-182
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- 2012
Modified Principal Component Analysis for In-situ Endpoint Detection of Dielectric Layers Etching Using Plasma Impedance Monitoring and Self Plasma Optical Emission Spectroscopy
Abstract
Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when
Keywords
- Endpoint Detection;
- Plasma Impedance Monitoring;
- Self Plasma Optical Emission Spectroscopy;
- Principal Component Analysis;
- Plasma Etching