Characteristics of CdS buffer layer for CIGS thin film solar cells
CIGS 박막 태양전지를 위한 CdS 버퍼층의 특성 연구
- Park, Mi-Sun (Daegu Gyeongbuk Institute of Science & Technology (DGIST)) ;
-
Sung, Shi-Joon
(Daegu Gyeongbuk Institute of Science & Technology (DGIST))
;
-
Hwang, Dae-Kue
(Daegu Gyeongbuk Institute of Science & Technology (DGIST))
;
-
Kim, Dae-Hwan
(Daegu Gyeongbuk Institute of Science & Technology (DGIST))
;
-
Lee, Dong-Ha
(Daegu Gyeongbuk Institute of Science & Technology (DGIST))
;
-
Kang, Jin-Kyu
(Daegu Gyeongbuk Institute of Science & Technology (DGIST))
- 박미선 (대구경북과학기술원) ;
-
성시준
(대구경북과학기술원)
;
-
황대규
(대구경북과학기술원)
;
-
김대환
(대구경북과학기술원)
;
-
이동하
(대구경북과학기술원)
;
-
강진규
(대구경북과학기술원)
- Published : 2012.03.29
Abstract
Chemical bath deposition (CBD) process conditions for depositing CdS buffer layers was studied for high efficiencies of CIGS thin film solar cells. Growth rate of CdS thin films has an effect on surface morphology and quality of thin films. By the change of growth rate, CdS buffer layers showed a large difference in surface morphology and this difference was closely related with the photovoltaic properties of CIGS solar cells.