한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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- Pages.119-119
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- 2011
Control of Graphene's Electrical Properties by Chemical Doping Methods
- Lee, Seung-Hwan (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano-Technology (SANIT), Department of Nano Science and Technology, Sungkyunkwan University) ;
- Choi, Min-Sup (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano-Technology (SANIT), Department of Nano Science and Technology, Sungkyunkwan University) ;
- La, Chang-Ho (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano-Technology (SANIT), Department of Nano Science and Technology, Sungkyunkwan University) ;
- Yoo, Won-Jong (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano-Technology (SANIT), Department of Nano Science and Technology, Sungkyunkwan University)
- 발행 : 2011.08.17
초록
This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78