대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

수소화된 산화아연을 이용한 박막 트랜지스터의 제작 및 열처리 효과

Characterization of thin film transistors using hydrogenated ZnO films and effects of thermal annealing

  • 이상혁 (한양대학교 전자전기제어계측공학과) ;
  • 김원 (한양대학교 전자전기제어계측공학과) ;
  • 엄현석 (한양대학교 전자전기제어계측공학과) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Lee, Sang-Hyuk (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Won (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Uhm, Hyun-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 발행 : 2011.07.20
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초록

Effects of thermal annealing on electrical characteristics of thin film transistors (TFTs) using hydrogenated zinc oxide (ZnO:H) films as active channel were extensively investigated. The ZnO:H films were deposited at room temperature by RF sputtering. The device parameters of the ZnO:H-based TFTs, such as threshold voltage ($V_{th}$), subthreshold swing (S.S.), and on-off current ratio ($I_{on}/I_{off}$), were characterized in terms of the annealing temperature as well as the gas flow ratio of $H_2$/Ar.

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