한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)

한국재료학회 (Materials Research Society of Korea)
권호 표지

Effect of Anionic Polyelectrolyte on Alumina Dispersions for Ru Chemical Mechanical Polishing

  • Venkatesh, R. Prasanna (Department of Materials Engineering, Hanyang University) ;
  • Victoria, S. Noyel (Department of Materials Engineering, Hanyang University) ;
  • Kwon, Tae-Young (Department of Materials Engineering, Hanyang University) ;
  • Park, Jin-Goo (Department of Materials Engineering, Hanyang University)
  • 발행 : 2011.10.27
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초록

Ru is used as a bottom electrode capacitor in dynamic random access memories (DRAMs) and ferroelectric random access memories (FRAMs). The surface of the Ru needs to be planarized which is usually done by chemical mechanical polishing (CMP). Ru CMP process requires chemical slurry consisting of abrasive particles and oxidizer. A slurry containing NaIO4 and alumina particles is already proposed for Ru CMP process. However, the stability of the slurry is critical in the CMP process since if the particles in the slurry get agglomerated it would leave scratches on the surface being planarized. Thus, in the present work, the stability behavior of the slurry using a suitable anionic polyelectrolyte is investigated. The parameters such as slurry pH, polyelectrolyte concentration, adsorption time and the sequence of addition of chemicals are optimized. The results show that the slurry is stable for longer time at an optimized condition. The polishing behavior of the Ru using the optimized slurry is also investigated.

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