한국태양에너지학회:학술대회논문집

The Korean Solar Energy Society (한국태양에너지학회)
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Properties of Silicon Nitride Deposited by LF-PECVD with Various Thicknesses and Gas Ratios

가스비와 두께 가변에 따른 실리콘질화막의 특성

  • Park, Je-Jun (Dept. of Electronic Engineering, Chungnam National University) ;
  • Kim, Jin-Kuk (Dept. of Semiconductor Engineering, Chungbuk National University) ;
  • Lee, Hi-Deok (Dept. of Electronic Engineering, Chungnam National University) ;
  • Kang, Gi-Hwan (Korea Institute of Energy Research) ;
  • Yu, Gwon-Jong (Korea Institute of Energy Research) ;
  • Song, Hee-Eun (Korea Institute of Energy Research)
  • 박제준 (충남대학교 대학원 전자.전파.정보통신공학과) ;
  • 김진국 (충북대학교 대학원 반도체공학과) ;
  • 이희덕 (충남대학교 대학원 전자.전파.정보통신공학과) ;
  • 강기환 (한국에너지기술연구원) ;
  • 유권종 (한국에너지기술연구원) ;
  • 송희은 (한국에너지기술연구원)
  • Published : 2011.11.24
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Abstract

Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of $SiN_x$ were changed from 700 ${\AA}$ to 1150 ${\AA}$ with the gas flow of $SiH_4$ as 40 sccm and $NH_3$ as 120 sccm,. The carrier lifetime enhanced as the thickness of $SiN_x$ increased due to improved passivation effect. To study the characteristics of $SiN_x$ with various gas ratios, the gas flow of $NH_3$ was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of $SiN_x$ was fixed as 1000 ${\AA}$ and the gas flow of $SiH_4$ as 40 sccm. The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at $650^{\circ}C$ to investigate their change by the firing process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio $NH_3/SiH_4$ of 3.

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